The new double-slit structure gives rise to

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picture: fig. 1 The schematic of the double-slit graphene photodetector
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Credit: OAE

A new publication from Advances in optoelectronics; DOI 10.29026/oea.2022.210159 considers a graphene photodetector using a double-slit structure with improved responsiveness and wide bandwidth.

The ongoing Fourth Industrial Revolution is data driven and optical interconnects are expected to offer higher bandwidth, smaller footprint and lower power consumption to meet the growing demand for more robust data handling capabilities. As a key part of optical communication systems, the photodetector can convert optical signal to electrical signal and is expected to feature ultra-high bandwidth. The hybrid graphene/silicon photodetector has attracted a lot of attention since its first demonstration due to its potential to achieve bandwidth above 100 GHz. However, the atomic thickness of graphene severely limits its optical absorption, resulting in low reactivity. Plasmonic structures have been explored to improve responsiveness, but the intrinsic metallic ohmic absorption of the plasmonic mode limits its performance.

To solve this problem, the authors of this paper propose a new double-slit structure for high-performance photodetection, taking advantage of both silicon photonics and plasmonics. With the optimized structural parameters, the double-slit structure significantly promotes graphene absorption while maintaining low metal absorption. Based on the double-slit structure, the demonstrated photodetector has a high sensitivity of 603.92 mA/W and a wide bandwidth of 78 GHz. The high performance photodetector offers a competitive solution for the silicon photodetector. Additionally, the double-slit structure could benefit a wider range of two-dimensional material/silicon hybrid devices to achieve stronger light-matter interaction with lower metal absorption.

Article reference: Yan SQ, Zuo Y, Xiao SS, Oxenløwe LK, Ding YH. Graphene photodetector using a double-slit structure with improved responsiveness and wide bandwidth. Opto-Electron Adv 5, 210159 (2022). doi: 10.29026/oea.2022.210159

Key words: graphene / silicon photonics / photodetectors

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The High Speed ​​Optical Communications Group led by Professor Leif Katsuo Oxenløwe of DTU Fotonik works on most aspects of optical communication technologies. These range from integrated photonics for optical data signal processing to the development of high-capacity long-range data transmission and quantum communication. The group develops key technologies to improve the performance and energy efficiency of future optical communications systems. Some of the main technologies discussed are:

  • Communication and cybertechnology; communications, digital and optical signal processing, high capacity communications, nonlinear optics, wireless and THz photonic communications, broadband, communications sources, silicon photonics, data center interconnects, access networks
  • green and sustainable societies; energy efficient communications
  • Quantum photonic technology; quantum cryptography.

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Advances in optoelectronics (OEA) is a high-impact, open-access, peer-reviewed SCI monthly journal with an impact factor of 8.933 (Journal Citation Reports for IF2021). Since its launch in March 2018, OEA has been indexed in SCI, EI, DOAJ, Scopus, CA and ICI databases over time and has expanded its editorial board to 36 members from 17 countries and regions (average h-index of 49).

The journal is published by the Institute of Optics and Electronics of the Chinese Academy of Sciences, aiming to provide a platform for researchers, scholars, professionals, practitioners and students to impart and share knowledge under the form of high quality empirical and theoretical research papers covering the topics of optics, photonics and optoelectronics.

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ISSN: 2096-4579

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